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Please use this identifier to cite or link to this item: http://hdl.handle.net/123456789/11426

Title: Sintering process and annealing effect on some physical properties of V2O5 thin films
Authors: H. A. Mohamed
Keywords: V2O5, Thin films,
, Sintering
Electrical resistivity
Issue Date: 2009
Publisher: INOE Publishing House
Abstract: Thin films of vanadium pentoxide (V2O5) on glass substrates were produced by e-beam evaporation technique. The effect of sintering process and annealing temperature on the morphology and optoelectronic properties of these films were studied. The obtained results from scan electron microscope show that, the grain size of V2O5 films increases with increasing both the temperature of sintering and annealing temperature. The as-deposited films show high transmittance in the visible region that decrease with increasing the temperature of annealing. The films that sintered at 500 oC represents the high transmittance value about 85 % in the visible region. The electrical resistivity indicates that, the films that sintered at 400 oC and 600 oC transform from semiconductor to metal at temperature of 250oC.
URI: http://hdl.handle.net/123456789/11426
Appears in Collections:College of Teaching

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