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Please use this identifier to cite or link to this item: http://hdl.handle.net/123456789/11445

Title: Estimation of the ideality factor of ZnTe/CdTe p-p heterojunction diodes
Authors: Alfaramawi K
Keywords: Heterojunction diode;
Ideality factor; Interface states
Issue Date: 2008
Publisher: NATL INST OPTOELECTRONICS, 1 ATOMISTILOR ST, PO BOX MG-5, BUCHAREST-MAGURELE 76900, ROMANIA
Abstract: Direct analytical method for estimating the ideality factor of ZnTe/CdTe isotype p-p heterojunction diodes is reported. The calculations were performed at two temperatures 300 K and 200 K. Simulations, considering the series and shunt parasitics, showed ideality factor values of 6.9 and 22.4 at 300 K and 200 K respectively. These values were compared with those extracted from the dark current-voltage curves which are 6.5 and 28.2 at the same temperatures. The large ideality factor in this system (particularly at low temperature) was attributed to the presence of high density of interface states (typically similar to 10(13) cm(-2)).
URI: http://hdl.handle.net/123456789/11445
Appears in Collections:College of Teaching

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