|
DSpace at King Saud University >
King Saud University >
COLLEGES >
Science Colleges >
College of Engineering >
College of Engineering >
Please use this identifier to cite or link to this item:
http://hdl.handle.net/123456789/12359
|
| Title: | DC modelling of modified field-effect transistor |
| Authors: | Al-Akhras, Mohammad A. Khan, Anwar A., Alamoud, Abdulrahman M. |
| Keywords: | Bipolar transistors; Electric currents; Semiconductor junctions |
| Issue Date: | 1994 |
| Publisher: | Publ by Taylor & Francis, Bristol, PA, United States |
| Citation: | International Journal of Electronics Volume 76, Issue 3, March 1994, Pages 417-424 |
| Abstract: | An analytical as well as experimental study of JFET-BJT composite unit, referred to as a modified field effect transistor (MFET), is described. Complete analysis of the circuit is presented, and on the basis of this analysis a DC model is proposed. The proposed model showed a very good approximation of the MFET circuit compared to the experimental results. |
| URI: | http://hdl.handle.net/123456789/12359 |
| ISSN: | 00207217 |
| Appears in Collections: | College of Engineering
|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
|