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Please use this identifier to cite or link to this item: http://hdl.handle.net/123456789/12359

Title: DC modelling of modified field-effect transistor
Authors: Al-Akhras, Mohammad A.
Khan, Anwar A.,
Alamoud, Abdulrahman M.
Keywords: Bipolar transistors; Electric currents; Semiconductor junctions
Issue Date: 1994
Publisher: Publ by Taylor & Francis, Bristol, PA, United States
Citation: International Journal of Electronics Volume 76, Issue 3, March 1994, Pages 417-424
Abstract: An analytical as well as experimental study of JFET-BJT composite unit, referred to as a modified field effect transistor (MFET), is described. Complete analysis of the circuit is presented, and on the basis of this analysis a DC model is proposed. The proposed model showed a very good approximation of the MFET circuit compared to the experimental results.
URI: http://hdl.handle.net/123456789/12359
ISSN: 00207217
Appears in Collections:College of Engineering

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