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Please use this identifier to cite or link to this item: http://hdl.handle.net/123456789/2918

Title: Preparation of heavily doped n-type Ge-Si thermoelectric alloys
Authors: Issa, M.A.A.
Amin, F.A.A.
Hassib, A.M.
Dughaish, Z.H.
Keywords: Heavily doped
N-type Ge-Si
Issue Date: Jul-1989
Publisher: Springer Verlag
Citation: Journal of Materials Science: 24 (7); 2300-2304
Abstract: Germanium-silicon alloys doped with phosphorus were prepared in vacuum by rapidly pouring the molten alloy into cooled copper moulds containing the phosphorus dopant. Without any further treatment, the ingots are milled into powder of grain size (L 5 µm) and hot pressed. It is shown that a high degree of homogenization of the alloy constituents can be obtained in the final compacts, thus eliminating the need for zone-levelled starting material. It is also shown that this work is in agreement with the plastic flow model of sintering known as the Mackenzie-Shuttleworth-McClelland model. Electrical measurements indicate that the dopant is effectively and uniformly incorporated into the alloy.
URI: http://www.springerlink.com/content/w3x341n270401372/?p=e81e83069b714e039db0751f6a0fdfec&pi=4
ISSN: 0022-2461
Appears in Collections:College of Science

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