Deep levels on zinc cadmium selenide alloys

Abstract

Deep level defects in Znx Cd,-x Se mixed crystals (with x = 0.93, 0.90, 0.86), grown from the<br>vapor phase, were investigated by steady state photocapacitance and infra-red quenching photocapaci-tance<br>techniques. A total of five deep levels have been obtained, one with an activation eQergy at about<br>0.75 - 0.94 eV below the conduction band and.four with activation energy of about 0.22,0.45,0.70 and<br>0.85 eV above the top ofthe valence band. Also~ome parameters calculated from the capacitance-voltage<br>data at room temperature, the values of the maximum electric field at the interface of the metal and semi<br>conductor (Em..) and the lowering ofthe potential barrier are determined in this study.